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eMMC UFS Issues 11
Component Feature
- 16nm eMMC 4.5 4G
- Controller :
- Hy
Failure Symptom
- Smart Phone hang-up, No Power-On
- Read Reclaim Fail
Root Cause
- Read Disturbance UECC error for file “Framework.odex” , size 10.1MB
- Read count : 1.28M times
- After E/W 0.1K, Under Read Stress Repeat Test , Read error over 100K times
Mechanism of Read Disturbance Failure
- turn on the Pass Bais to neighbor cell within same block
- turn off the Pass Bais to reading cell to read page data within same block
- can read data for the cell
- in case that the same cell is read repeatedly, it is possible to make a read disturbance sympton
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eMMC UFS Issues 10
Component Feature
- eMMC
- Controller :
- MI
Failure Symptom
- several timeout error for mmc0 R/W operation
- Failure rate : 3/20
Failure procedure
Root Cause
- eMMC CMD protocol analysis showed CMD 23 timeout invoke the ext4 file system error after HPI timeout by CMD13
- Host MMC driver refer to out-of-interrupt busy timing value from ECSD[198]:0x0A(100ms). After 100ms ECSD[198] value, the host MMC driver send CMD23 but timeout happens due to prg-state
- The small value of out-of-interrupt busy timing is cause of the problem
temporary corrective action
corrective action
- Firmware Update
-
eMMC UFS Issues 09
Component Feature
- 32GB UFS
- Controller :
- TO
Failure Symptom
- fDeviceInit fail
Root Cause
GCBlkInfo: stored GC target Block information. (stored total one ItlvBlk#)
BitmapTbl: stored L2P information. (stored total user area’s ItlvBlk#)-
Pass Case
- Fail Case
- have found the unmatched table between GCBlkInfoand BitmapTbl, which are the cause of fDeviceInit fail.
- have found that unmatched table have been generated by the FW bug, which occurs under very complicated conditions.
Failure procedure
- Step1: GC starts at ItlvBlk#AAA
- Failure occurrence condition (1)
- The GC of IntlvBLK#AAAneeds to stop at the end page of the GC destination BLK just before Unmap.
- Step2 :ItlvBlk#Abecomes free group.
- Failure occurrence condition (2)
- ItlvBlk#AAAis unmapped, and ItlvBlk#AAA’snumber of valid data becomes zero, and Stop ItlvBlk#A’sGC
- Step3 : ItlvBlk#Ais assigned new block group.
- Failure occurrence condition (3)
- ItlvBlk#AAAshould be assigned new free blocks. In this case, ItlvBlk#AAAis selected from many free areas on BitmapTblby chance.
-
Step4: GC starts at ItlvBlk#A
- Step5: As ItlvBlk#Ainfo between BitmapTbland GcBlkInfoare NOT the same, UFS device becomes fail because of unmatched table
-
eMMC UFS Issues 08
Component Feature
- 64GB UFS 2.1 3D
- Controller :
- Hy
Failure Symptom
- Under lower temperature ( -30 degree )
- Enter the Sleep Mode
- Enter/Exit Fail
Failure procedure
- The NMOS TR Vt increment of PLL (Phase Locked Loop) circuit within UFS controller does not work properly
- Inspecting Device Tx data line Eye diagram, the lower temperature jitter value was not work properly
Cause
- caused by the thickness increment of TR gate oxide during foundry Fab.(TSMC, 28nm)
-
eMMC UFS Issues 07
Component Feature
- 32GB UFS 2.0
- Controller :
- Hy
Failure Symptom
- UFS init fail
Failure procedure
- When the Read Reclaim for Supper Block was triggered and SPO was occured
- The history log was not remained atomically
Fixed to work after SPO
-
eMMC UFS Issues 06
Component Feature
- eMCP eMMC
- Controller :
- Hy
Failure Symptom
- no boot
Failure procedure
- fail1 : Static Wear Leveling does not work in case that Sequential Writing continues to repeat on narrow area block
- fail2 : Static Wear Leveling does not work in case that SPO continues to repeat after small Writing
Cause
- fail1
- on clean area, not on dirty area
- 512KB Chunk Sequential Writing was done repeatedly on 1GB
- Static Wear Leveling does not work properly
- fail2
- while valid data is full
- small data was written repeatedly on 1GB
- Erase counts on Over-provision area and 1GB range was increased rapidly
- SPO during small data writing caused the Static Wear Leveling not work properly
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